Abstract
We have recently demonstrated1–4 novel high responsivity 8-12 μm detectors (comparable to HgCdTe) based on intersubband absorption and photoexcited tunneling in doped multiquantum well superlattices of GaAs/AlGaAs. These detectors have the potential advantage over HgCdTe of a more mature materials and processing technology and the possibility of direct integration with high performance GaAs FETs. In this talk we will discuss the detailed physics and device operation of these detectors, as well as our newest results indicated below.
© 1988 Optical Society of America
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