Abstract
Ge-Si strained-layer epitaxy is a technique used to produce lattice-mismatched layers of Ge-Si alloys, on a Si substrate without introducing additional dislocations. This is achieved by keeping the layer thickness lower than the critical thickness shown in Figure 1. It can be seen that even the growth of pure Ge on Si is permitted if the layer thickness is less than 10Å.1 This requirement means that extended structures of Ge and Si must be grown as a superlattice, alternating layers of Si between the Ge layers in order to reduce the strain.
© 1988 Optical Society of America
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