Abstract
Laser chemical etching of III-V semiconductors has potential applications in the, fabrication of microelectronic devices, but little is known about the, fundamental aspects of laser stimulated gas-surface interaction. Recently, the thermal and ion-assisted reactions of GaAs (100) with molecular chlorine have been reported to elucidate some of the basic details of the reaction, mechanism(1). This paper present the first study of the UV/visible laser stimulated interaction of Cl2 with GaAs (100) surface. The experimental investigation couples CW supersonic molecular beam technique and time resolved mass spectrometry to provide more evidences for the Cl2 incident translational energy effect as well as the mass and velocity distributions of the reaction products under 355 and 560 nm laser irradiation.
© 1988 Optical Society of America
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