Abstract
We report a study of capture times of carriers in quantum wells by subpicosecond luminescence spectroscopy with a time resolution of 400 fs [1]. As thermalization in the quantum wells leads to rather long rise times of the luminescence (a few ps [2]), we have monitored the decay of the barrier luminescence as well as the rise of the well luminescence in multi quantum well (MQW) structures (InGaAs wells, InP barriers). The luminescence of the barrier is expected to disappear as soon as the faster of the two types of carriers is captured in the well. Interest in capture processes in quantum wells (QW) is twofold. On a theoretical basis, quantum capture might be expected to show oscillations as a function of the well width due to the resonant overlap of wavefunctions in the barriers and in the wells for some well widths (see for example Brum and Bastard [3], or Babiker and Ridley [4]). From a device point of view, long capture times would obviously limit the high frequency behaviour of quantum well lasers, so the capture in QWs has been studied for a long time [5].
© 1988 Optical Society of America
PDF ArticleMore Like This
B. Deveaud, D. Morris, A. Regreny, M. Barros, and P. Becker
QThC.3 Quantum Optoelectronics (QOE) 1993
M. R. X. de Barros, P C. Becker, D. Morris, B. Deveaud, A. Regreny, and F. A. Beisser
QWH31 Quantum Electronics and Laser Science Conference (CLEO:FS) 1993
BENOIT DEVEAUD, JAGDEEP SHAH, and T. C. DAMEN
TUDD1 International Quantum Electronics Conference (IQEC) 1987