Abstract

It has been shown by a number of works that a quantum well laser exhibits excellent performance and is very important in practical applications. Also the effect of impurity-induced disordering of multiquantum well (MQW)[1,2] can offer a simple technique to generate a built-in waveguide structure. We have already proposed a lateral current injection (LCI)-MQW laser[3] which has lateral contacts and exhibits an extremely low capacitance. These features are significant in the application to both high-speed lasers and planar, process-compatible optoelectronic integrated circuits (0EICs)[4].

© 1988 Optical Society of America