Abstract
GaInAs/AlInAs crystals grown by molecular beam epitaxy (MBE) on InP substrates have become spotlighted for the application of optical devices such as laser diodes1)-3) and electro-absorption optical modulators4) as well as high-speed electronic devices5),6). Especially, multiguantum-well (MQW) lasers, whose emission wavelength appears at 1.5μm range, are expected as light sources for low-loss optical fiber communication systems. Room-temperature CW operation of GaInAs/AlInAs MQW lasers was realized for the first time in a SiN-defined stripe structure7). Here, we evaluated the preliminary characteristics of GaInAs/AlInAs MQW lasers resulted from the adoption of a ridge-type stripe structure.
© 1988 Optical Society of America
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