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  • International Conference on Quantum Electronics
  • OSA Technical Digest (Optica Publishing Group, 1988),
  • paper TuJ4

STRuCTURE-DEPENDENT NOISE CHARACTERISTICS OF TRANSVERSE MODE STABILIZED InGaAlP LASER DIODES

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Abstract

InGaAlP visible-light laser diodes1-5) have attracted much interest as light sources for high-density optical disk systems, high-speed laser printers and bar code scanners. For application to optical disk systems, stabilization of transverse modes and suppression of optical-feedback induced noise are required for laser diode characteristics. Low noise characteristics have been realized in GaAlAs lasers by using a self-pulsation structure6). However, such a structure cannot be applied directly to InGaAlP lasers, because it is difficult to grow lattice-matched InGaAlP crystal onto grooved or stepped substrates.

© 1988 Optical Society of America

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