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Optica Publishing Group
  • International Conference on Quantum Electronics
  • OSA Technical Digest (Optica Publishing Group, 1988),
  • paper TuP43

CHARACTERISTIC EMISSION OF TRANSVERSE BURIED HETEROJUNCTION GaAs/AlGaAs SURFACE EMITTING LASER DIODE

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Abstract

Recently we have reported (1) the achievement of laser action in a novel surface emitting laser (SEL) diode using transverse junction and buried heterostructure. Because of the effect confinement of the injected carriers and optical field of this novel SEL structure, a cw low threshold current operation in the range of a few mA was observed. This SEL has a short distributed feedback-type optical resonator and its emission spectrum showed a distinct characteristic with a seemingly wide mode spacing. In this report we present the results of an experimental investigation on the characteristic emission properties of this SEL, and compare the results with a theoretical model based on the actual device structure. A fairly good agreement between the experimental results and theoretical predictions was obtained.

© 1988 Optical Society of America

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