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  • International Quantum Electronics Conference
  • OSA Technical Digest (Optica Publishing Group, 1990),
  • paper QFF4

Studies of exciton recombination and transport in high purity GaAs using high resolution nonlinear spectroscopy

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Abstract

Recent measurements1 in high purity molecular-beam-epitaxy grown GaAs have shown surprisingly that the radiative recombination time of free excitons in GaAs is of the order of 3.3 ns. The results were later interpreted in terms of the excitonpolariton picture.2 However, experiments using transient four-wave mixing showed the dephasing time in GaAs to be of the order of 7 ps, implying a minor role for the exciton-polariton effect.3

© 1990 Optical Society of America

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