Resonant intervalley scattering in GaAs

J.-Y. BIGOT; M. T. PORTELLA; R. W. SCHOENLEIN; C. V. SHANK

International Quantum Electronics Conference
OSA Technical Digest (Optica Publishing Group, 1990),
paper QMA2

Resonant intervalley scattering in GaAs

J.-Y. BIGOT, M. T. PORTELLA, R. W. SCHOENLEIN, and C. V. SHANK

International Quantum Electronics Conference 1990

Anaheim, California United States
21–25 May 1990
ISBN: 1-55752-145-X

From the session
Ultrafast Processes in Bulk Semiconductors (QMA)

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J. -. BIGOT, M. T. PORTELLA, R. W. SCHOENLEIN, and C. V. SHANK, "Resonant intervalley scattering in GaAs," in International Quantum Electronics Conference, A. Owyoung, C. Shank, S. Chu, and E. Ippen, eds., Vol. 8 of OSA Technical Digest (Optica Publishing Group, 1990), paper QMA2.

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Abstract

The process of intervalley scattering in semiconductors has been extensively studied using ultrashort optical pulses.¹ We report the discovery of a new effect which we term resonant intervalley scattering. The observation of this effect was facilitated by the superior time resolution made possible by the use of 6-fs optical pulses.²

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