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Conferences > IQEC > 1990 > QPDP > QPDP14
  • International Quantum Electronics Conference
  • OSA Technical Digest (Optica Publishing Group, 1990),
  • paper QPDP14

The electronic g-factor in GaAs/AlGaAs quantum wells

M.J. Sneiling, G.P. Flinn, A.S. Plaut, R.T. Harley, A.C. Tropper, R. Eccleston, and C.C. Phillips

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Abstract

We report the first determination of electron g-value, g*, in a type I quantum well system (GaAs/AlGaAs) for a wide range of well width Lz. Standard optically detected spin resonance does not work in type I systems where the electron recombination times are short (≲lns). Therefore we have determined g* by combined measurements of photoluminescence decay time (τr), and circular polarisation supression in a magnetic field (Hanle effect)1. Our samples consisted of single isolated quantum wells of various widths (Lz) in which the heavy hole concentration could be varied by means of electrical bias up to ~1011cm−2.

© 1990 Optical Society of America

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