Abstract

In a zinc blende type crystal like GaAs, there exists an asymmetry in the energy bands. Because of such asymmetry, the optical properties in quantum wells (QWs) depend on the substrate-orientation on which the QW structures are grown. However, in most theoretical and experimental work to date, QW lasers grown on (100)-oriented substrates have been studied.^1,2 Pioneering experimental work which was done by Hayakawa et al.³ demonstrated that lower threshold currents can be achieved in the QW laser grown on (11 l)-substrates.

© 1990 Optical Society of America