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Conferences > IQEC > 1990 > QTUA > QTUA6
  • International Quantum Electronics Conference
  • OSA Technical Digest (Optica Publishing Group, 1990),
  • paper QTUA6

Excitonic transitions in nanometer scale quantum wires produced by in-plane lattice-constant modulation

D. GERSHONI, L. N. PFEIFFER, K. WEST, J. S. WEINER, S. N. G. CHU, T. TANBUN-EK, R. A. LOGAN, and J. M. VANDENBERG

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Abstract

We have produced quantum wires of <10 nm in lateral dimension, smaller than the bulk exciton diameter. The quantum wires were fabricated by growing AlGaAs/GaAs quantum wells on a cleaved edge of an InGaAs/GaAs strained layer superlattice. Two wells were grown with widths of 70 and 30 Å, respectively. The lateral confinement in these structures is a consequence of the strain modulation of the inplane lattice constant of the (110) oriented GaAs quantum wells.

© 1990 Optical Society of America

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