Abstract

Since the first prediction of gain in Sn at 110.5 eV,¹ the Ni-like scheme has been used to experimentally demonstrate gain at 44.8 Å in Ta.² Amplification has been demonstrated in high-Z materials, starting with Eu(Z = 63), which required an electron temperature of 600 eV.³ The requirement of high electron temperature for high-Z materials has necessitated the use of large scale laboratory facilities.

© 1990 Optical Society of America