Abstract

Energy levels in narrow wells are extremely sensitive to the well width. In fact, inhomogeneous broadening of the optical transitions arises primarily from well- width variations limited by interfacial roughness of approximately one atomic monolayer.¹ Since both electron and hole distributions are broadened by these well- width variations, they contribute individually to the inhomogeneous linewidths. Here we report spectroscopic results in GaAs/AlAs type II heterostractures² that separate the electron and hole contributions.

© 1990 Optical Society of America