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Conferences > IQEC > 1990 > QTUH > QTUH25
  • International Quantum Electronics Conference
  • OSA Technical Digest (Optica Publishing Group, 1990),
  • paper QTUH25

Use of time-resolved photoluminescence in the simultaneous determination of surface recombination velocity and diffusion length in heavily C doped GaAs

ATSUSHI KUROBE, HARUHIKO YOSHIDA, YASUO ASHIZAWA, YUTAKA UEMATSU, and TAKAO NODA

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Abstract

Time-resolved photoluminescence (PL) has been widely used to characterize semiconductors including bulk as well as interface1 properties. We report here a novel method for the simultaneous measurement of surface recombination and diffusion length by the picosecond time-resolved PL technique. The method was successfully applied to heavily carbon doped p-type GaAs layers.

© 1990 Optical Society of America

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