Abstract
Excitonic transitions dominate the optical properties of GaAs/AlGaAs multiple quantum wells (MQWs) near the band edge for low excitation densities. The relaxation of the excited state and the optically induced polarization differ for localized and delocalized excitons. This relaxation arises from elastic and inelastic scattering with phonons and potential fluctuations as well as spontaneous emission.
© 1990 Optical Society of America
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