Abstract

The resonant tunneling double barrier diode (DBD) has generated great interest for experimentally testing the fundamental concepts of tunneling and for its potential application to high speed electronics.^1,2 However, a number of fundamental questions concerning the operating principles of the device remain. These include the question of tunneling time, the sequential or coherent nature of the process, the amount of charge stored in the well, and the charge distribution in the contact layers.

© 1990 Optical Society of America