Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group
  • International Quantum Electronics Conference
  • OSA Technical Digest (Optica Publishing Group, 1990),
  • paper QWC6

Squeezing and cavity quantum electrodynamics in GaAs quantum well lasers

Not Accessible

Your library or personal account may give you access

Abstract

The quantum efficiency of spontaneous emission coupled into a single laser mode is of the order of 10−5 for a usual semiconductor laser. Thus a typical threshold current is as high as 10 mA. We have shown theoretically and experimentally that the quantum efficiency can be increased close to one by concentrating the spontaneous radiation pattern in a normal direction in a 1-D periodic structured microcavity.

© 1990 Optical Society of America

PDF Article
More Like This
InGaAs-GaAs strained layer quantum well heterostructure lasers

J. J. COLEMAN
WJ1 Optical Fiber Communication Conference (OFC) 1990

Observation of photon antibunching in cavity quantum electrodynamics

R. J. BRECHA, W. D. LEE, R. J. THOMPSON, and H. JEFFREY KIMBLE
QWG2 International Quantum Electronics Conference (IQEC) 1990

Low threshold current GaAs/AlGaAs quantum well lasers: modeling and experiment

J. S. OSINSKI, S. G. HUMMEL, P. D. DAPKUS, and K. M. DZURKO
CMH4 Conference on Lasers and Electro-Optics (CLEO:S&I) 1990

Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All Rights Reserved