Abstract
Semiconductor crystallites of a few nanometers up to several tens in size and a wide range of volume concentrations can be artificially grown in a glass matrix by a thermal diffusion process. When the spatial extension of these semiconductor crystallites is restricted isotropically in all three dimensions below the electron radius ae, the character of the electron and hole States drastically changes with respect to that of the bulk semiconductor: the continuum of valence to conduction band transitions is replaced1 by a series of discrete localized transitions whose spectral positions depend on the crystallite size a.
© 1990 Optical Society of America
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