Abstract

The dynamics of optical nonlinearities in the transparent region of semiconductors determines the speed of refractive all-optical switches. The InGaAs/InAlAs quantum well absorption edge can be designed in the 1.4-1.6-µm range making it compatible with silica fiber communication. Studies of below band gap excitation in quantum wells have included bandtail state absorption¹ and the optical Stark effect of the exciton line.² Most studies utilized excitation below the band-edge and a probing pulse at or above the band-edge. A probe beam in the transparent range has been used for electroreflectance studies in GaAs and InGaAs quantum wells.³

© 1990 Optical Society of America