Abstract

GaAs metal-semiconductor-metal (MSM) photodetectors are very attractive for use in light wave communication at 0.8 μm. Their most promising advantages are broad bandwidth, small leakage current and compatibility with metal-semiconductor field effect transistor technology. Here we discuss the potentials to improve the response speed of these detectros by proper balance of the semiconductor material, detector area and electrode separation. We achieve profound insight into the response limiting physical processes by 2D Monte Carlo simulations of the carrier transport as well as electro-optic and photoconductive sampling measurements.^[1] The detectors consisted of an interdigitated metallic (Ti/Pt/Au) finger structure produced by electron beam lithography on a GaAs surface.

© 1992 IQEC