Abstract

The key parameters characterizing the dynamics of carriers in semiconductors are the plasma frequency ω_p and the carrier damping rate Γ = 1/τ, where τ is the carrier collision time. Because ω_p and Γ characteristically have THz values, measurements should be performed in the difficult THz frequency range. In previous measurements microwaves have been used for frequencies below 0.1 THz and far-infrared spectroscopy has been applied to very high frequencies where the carrier response is less important. Consequently, it remains important to perform measurements spanning the values of the key parameters. This is now possible.

© 1992 IQEC