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  • XVIII International Quantum Electronics Conference
  • Technical Digest Series (Optica Publishing Group, 1992),
  • paper TuP2

Bistability of the Four-Wave-Mixing Regime in a GaAlAs Semiconductor Laser under Intermodal Optical Injection

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Abstract

Optical injection into a diode laser is a well-known method to induce and investigate highly-efficient nonlinear effects in semiconductor lasers.[1,2] When injection occurs in the vicinity of a non-lasing longitudinal mode (intermodal injection), the slave laser can oscillate in three regimes schematically represented on Fig. 1, depending on the injected optical power Pinj and the frequency detuning δω = ω1 - ωinj between the master laser (noted Einj) and the injected longitudinal side-mode (E1).

© 1992 IQEC

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