Abstract
We will present our study on the optical nonlinearity and fast exciton dynamics in porous silicon. Efficient anisotropic infrared-upconversion luminescence generated from porous silicon layer due to its strong optical nonlinear polarizability has been observed and could be explained by the quantum confinement effect.1,2 The high optical nonlinear response of porous silicon by the localization of exciton arising from the nanometer structure of that material.3,4 Our recent studies are engaged on the temperature-dependent and picosecond time-resolved photoluminescence measurements. Several porous silicon samples with different post-treatments for obtaining different surface-related states are studied with temperatures ranged from 77 K to 410 K.
© 1994 Optical Society of America
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