Abstract

Until recently, intersubband phenomena in the mid-IR (2-8 μm) regime have remained largely unexplored because of both the lack of semiconductor materials presenting sufficient bandgap engineering possibilities and the difficulty in obtaining tunable high power sources in that spectral region. The introduction of high indium content InGaAs/AlGaAs quantum wells (QW),¹ together with the development of free electron lasers uncover a new field of experiments.

© 1994 Optical Society of America