Very Deep rf Ion Trap

C. Monroe; S. R. Jefferts; D. J. Wineland

International Quantum Electronics Conference
OSA Technical Digest (Optica Publishing Group, 1994),
paper QPD3

Very Deep rf Ion Trap

C. Monroe, S. R. Jefferts, and D. J. Wineland

International Quantum Electronics Conference 1994

Anaheim, California United States
8–13 May 1994
ISBN: 1-55752-342-8

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C. Monroe, S. R. Jefferts, and D. J. Wineland, "Very Deep rf Ion Trap," in International Quantum Electronics Conference, J. Shah, C. Weiman, R. Freman, and J. Fujimoto, eds., Vol. 9 of OSA Technical Digest (Optica Publishing Group, 1994), paper QPD3.

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Abstract

Laser-cooled ions can now routinely be confined to well under an optical wavelength (Lamb-Dicke regime). Recently, much effort has been invested in the development of very deep, miniature rf-ion traps^{1, 2} for even further confinement. Here we present for the first time, an ion trap exhibiting secular frequencies larger than the linewidth of a strongly-allowed dipole transition in the ion.

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