Abstract
Recently, the whispering-gallery-mode microdisk lasers based on InGaAs/InGaAsP quantum wells have been demonstrated at liquid-nitrogen and at room temperatures.1 In these lasers the optical mode is strongly confined in the direction perpendicular to the disk and most of the spontaneous emission can be coupled into the lasing mode.2,3 As a result, microdisk lasers have a low lasing threshold. In this paper we report the lasing characteristics of microdisk lasers based on an alternative material system, InAlGaAs.
© 1994 Optical Society of America
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