Transient FWM experiments on ordered and disordered Ga0.52In0.45P

P. Grossmann; J. Feldmann; D. Bennhardt; E. O. Cöbel; P. Thomas; D. J. Arent; D. J. Arent; A.K. Bertness; A.K. Bertness; J. M. Oison; J. M. Oison

International Quantum Electronics Conference
OSA Technical Digest (Optica Publishing Group, 1994),
paper QThK4

Transient FWM experiments on ordered and disordered Ga_0.52In_0.45P

P. Grossmann, J. Feldmann, D. Bennhardt, E. O. Cöbel, P. Thomas, D. J. Arent, A.K. Bertness, and J. M. Oison

International Quantum Electronics Conference 1994

Anaheim, California United States
8–13 May 1994
ISBN: 1-55752-342-8

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Exciton Physics (QThK)

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P. Grossmann, J. Feldmann, D. Bennhardt, E. O. Cöbel, P. Thomas, D. J. Arent, A. K. Bertness, and J. M. Oison, "Transient FWM experiments on ordered and disordered Ga0.52In0.45P," in International Quantum Electronics Conference, J. Shah, C. Weiman, R. Freman, and J. Fujimoto, eds., Vol. 9 of OSA Technical Digest (Optica Publishing Group, 1994), paper QThK4.

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Abstract

The ternary semiconductor Ga,.In₁-_x P can be grown either disordered or ordered.¹ The ordered material is composed of domains of varying degrees of column-III sublattice ordering.² Investigations of the linear-op- deal properties have shown that the ordering leads to a pronounced lowering of the optical band gap.¹ The possibility of tailoring the degree of order makes this material system highly interesting for the study of carrier-localization effects.

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