Abstract
The ternary semiconductor Ga,.In1-x P can be grown either disordered or ordered.1 The ordered material is composed of domains of varying degrees of column-III sublattice ordering.2 Investigations of the linear-op- deal properties have shown that the ordering leads to a pronounced lowering of the optical band gap.1 The possibility of tailoring the degree of order makes this material system highly interesting for the study of carrier-localization effects.
© 1994 Optical Society of America
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