Abstract
Thermalization of three-dimensional (3-D) carriers in bulk GaAs and two-dimensional (2-D) carriers in GaAs quantum wells (QWs) has been extensively studied over the past years. However, the problem of carrier thermalization between the 2-D and 3-D carriers has hardly been addressed to date. At high photoexcited carrier densities (6 × 1012 cm−2), a thermalization time of less than 300 fs was found,1 and equal carrier temperatures for the 2-D carriers in the QW and 3-D carriers in the barriers of InGaAs/InP QW structures were observed.
© 1994 Optical Society of America
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