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Optica Publishing Group
  • International Quantum Electronics Conference
  • OSA Technical Digest (Optica Publishing Group, 1994),
  • paper QWC48

Optically induced Anderson delocalization transition in randomly disordered systems

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Abstract

The subject of this study is the behavior of electronic states in disordered materials in the presence of strong optical radiation. In the late 1950's Anderson1 predicted that there exists a strong metal-insulator transition in a disordered material when the intersite coupling energy V exceeds the site energy spread σ. In 1990 an unusual intensity-dependent thresholding behavior was observed in experiments in seeded second-harmonic generation (SHG) in optical fibers and, more recently, in bulk glasses. The hypothesis of optically induced Anderson delocalization (OIAD) transition of the trap state was proposed to explain the experimental results. It was suggested that the ac Stark effect renormalizes both the energy spread of trap energy and the intertrap coupling energy, and hence the transition occurs.2 Since no detailed proof had been carried out to support the hypothesis, we recently developed a rigorous theoretical model that describes the evolution of localized trap states under the external optical field. Our results shows that OIAD is indeed expected to occur in such systems.

© 1994 Optical Society of America

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