Optically induced increases in the effective excitonic oscillator strength in GaAs

Anne C. Schaefer; Min Jiang; Duncan G. Steel; Harrison M. Randall

International Quantum Electronics Conference
OSA Technical Digest (Optica Publishing Group, 1994),
paper QWC58

Optically induced increases in the effective excitonic oscillator strength in GaAs

Anne C. Schaefer, Min Jiang, Duncan G. Steel, and Harrison M. Randall

International Quantum Electronics Conference 1994

Anaheim, California United States
8–13 May 1994
ISBN: 1-55752-342-8

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Poster Session 2 (QWC)

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A. C. Schaefer, M. Jiang, D. G. Steel, and H. M. Randall, "Optically induced increases in the effective excitonic oscillator strength in GaAs," in International Quantum Electronics Conference, J. Shah, C. Weiman, R. Freman, and J. Fujimoto, eds., Vol. 9 of OSA Technical Digest (Optica Publishing Group, 1994), paper QWC58.

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Abstract

The description of the nonlinear optical response of semiconductors near the excitonic resonance has been based on the semiconductor Bloch equations, which have successfully characterized the effects of phase-space filling, exchange,¹ and, more recently, dynamical exciton-exciton interactions.² These effects can be correlated with a saturation of effective excitonic oscillator strength, a shift in resonant energy, and an increase in linewidth. We present a study of an optically induced absorption corresponding to an increase in effective oscillator strength f_eff of the lowest-lying excitonic state in GaAs.

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