Abstract

Studies on II–VI semiconductors, especially on ZnSe/ZnCdSe quantum wells, have been a topic of great interest because the wide band gap and the high luminescence efficiency of the materials have demonstrated an attractive potential for developing blue-green diode lasers.^1,2 In this paper we report transient photoluminescence investigations on ZnSe/(CdSe)_m(ZnSe)_n short-period-superlattice quantum wells (SPSQs) for what we believe to be the first time. In comparison with ZnSe/ZnCdSe alloy quantum wells, SPSQs have high crystalline quality owing to the introduction of an ultrashort-period (CdSe)_m(ZnSe)_n super-lattice in the wells to replace the ZnCdSe alloy. The problems associated with the mismatch dislocation and alloying are thus eliminated. The transient luminescence of the samples indicates a rapid carrier capturing and relaxation time resulting from quantum confinement.

© 1994 Optical Society of America