Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group
  • International Quantum Electronics Conference
  • 1996 OSA Technical Digest Series (Optica Publishing Group, 1996),
  • paper FO1

Second order nonlinear optical spectroscopy of midgap states at the metal/GaAs interface

Not Accessible

Your library or personal account may give you access

Abstract

Interface states at metal/semiconductor junctions have received intense interest because of their perceived role in affecting device properties. Nonlinear optical spectroscopy is well suited for studying these buried interfaces as a result of its inherent interface sensitivity and long penetration depth [1]. Here we report observations of midgap interface states at the metal/GaAs [001] interface by second harmonic generation (SHG) and sum frequency generation (SFG).

© 1996 Optical Society of America

PDF Article
More Like This
Interface states studied by second-harmonic generation from metal/GaAs junctions

J. Qi, W. Angerer, M. S. Yaganeh, A. G. Yodh, and W. M. Theis
QTuC8 Quantum Electronics and Laser Science Conference (CLEO:FS) 1995

Separation of bulk and interface contributions by optical second harmonic electroreflectance spectroscopy of a Si(001) metal-oxide-semiconductor structure

J. I. Dadap, X. F. Hu, M. H. Anderson, M C. Downer, J. K. Lowell, and O. A. Aktsipetrov
QWE30 Quantum Electronics and Laser Science Conference (CLEO:FS) 1996

Evidence for interface states observed by second-harmonic generation from Au/GaAs junctions

J. Qi, M. S. Yeganeh, A. G. Yodh, and W. M. Theis
JThB3 Conference on Lasers and Electro-Optics (CLEO:S&I) 1994

Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All rights reserved, including rights for text and data mining and training of artificial technologies or similar technologies.