Abstract
Recently we have shown that the Si(111)- 7×7↔“1×1” phase transition around 830°C can be observed by means of surface second-harmonic generation (SHG)[1]. The SH intensity variation has been shown to be used for the kinetic study of this phase transition [2], for which a number of studies have been devoted using various surface-investigating techniques. However, an important question still remains on what is the relevant electronic states involved in the observed nonlinear process, where the SHG in 7×7 is reasonably assumed to be due to the surface state transitions, while the SHG in “1×1”, assumed to originate from an interface between the disordered surface layer and the ordered layer [1], has no direct information on its energy levels. In this study, we have obtained by SHG the resonant characteristics of 7×7 and “1×1”.
© 1996 Optical Society of America
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