Abstract

Recently. a number of papers have considered the gain and spontaneous emission spectra of InGaAsP and related alloys [1-4]. These papers tend to ignore, to some extent, the effect of the lighthole and split-off bands, non-parabolicity of the bands and band gap shrinkage due to carrier injection. As we shall show, these have a large impact on the optical gain and spontaneous emission characteristics of InGaAsP and affect the reliability of device models using these parameters. In this paper, we investigate the stimulated gain and spontaneous emission spectra including all of these effects, using a technique broadly similar to that used in references [5-6] and apply the results to the case of a dynamic model of a near-travelling wave amplifier.

© 1996 Optical Society of America