Abstract

Semiconductor light emitters (light emitting diodes and laser diodes) are well known as sources of amplitude squeezed light. By high-impedance suppression of pump noise in th electrical current, the Fano factor of the ouput light beam from a light emitting diode (LED) can reach F₀=l-η, where η) is the overall quantum efficiency (the transfer ratio from the pump electrical current to the detector photocurrent) [1,2], However, the maximum squeezing of 85% reported from a semiconductor laser diode was in excess of this limit [3]. The explanation advanced for the observed squeezing being larger than η was the existence of a non-lasing diode (and noiseless electrical current division) inside the used TJS laser diode. Since the electrical current division occurs inside the light emitter device, its existence could not be confirmed by a single beam measurement.

© 1996 Optical Society of America