Abstract
The thermal diffusion of metal ions into dielectric hoses is routinely exploited in the preparation of active and passive integrated optical devices with applications in telecommunications and sensing. Sapphire is a well-known gain medium when doped with transitionmetal ions such as Cr3+ or Ti3+. However, its potential as a planar optoelectronic substrate remains undeveloped. The realisation of versatile active integrated optical devices in standard, high quality sapphire substrates requires the development of optical waveguide, allowing low-power pumping and device integration, and the local introduction of the active ions, allowing spatial variation of the dopant concentration, In this paper, the thermal diffusion of TV into sapphire is demonstrated, with the ultimate aim of developing a broadly tunable waveguide laser source in the near infra-red.
© 1996 Optical Society of America
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