Abstract

The luminescence properties of wide-band-gap II-VI semiconductors is currently of considerable interest [1,2] because of their relevance to the development of short-wavelength diode lasers which are needed in many areas of high-tech applications. The availability of high-quality MBE grown NzSe- based semiconductor heterostructures have made possible observation of strong room-temperature luminescence as well as fabrication of blue and blue- green laser diodes. We report here what we believe is the first observation of strong room-temperature luminescence and stimulated emission from high- quality ZnO thin films grown on sapphire substrates using the ion plating method.

© 1996 Optical Society of America