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Optica Publishing Group
  • International Quantum Electronics Conference
  • OSA Technical Digest (Optica Publishing Group, 1998),
  • paper QFH4

Large optical nonlinearìties near the bandgap of MOCVD-grown GaN thin films

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Abstract

The III—V nitrides are attracting an ever-increasing amount of attention due to their great physical hardness, chemically inert nature, and large direct bandgaps, making them promising materials for UV-blue-green light-emitting devices and detectors, including devices operable at high temperatures and/or in hostile environments.1 Current advances have made high-brightness light-emitting diodes (LEDs) and cw laser diodes based on the III—V nitrides a reality,2,3 but much information about the optical phenomena associated with high carrier concentrations in these materials is still unknown. To study the effects of high densities of excess free carriers on the optical transitions near the band edge of wurtzite GaN, nondegenerate nanosecond optical pump-probe transmission and reflection experiments have been performed on GaN thin films grown by metallo-organic chemical-vapor deposition (MOCVD) on (0001)-oriented sapphire. The large magnitude of the optical nonlinearities observed in our work suggests the possibility of new optoelectronic applications for the III-V nitrides.

© 1998 Optical Society of America

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