Abstract

Semiconductor quantum dots (QDs) as a quasi-zero dimensional structure provide a unique system for studying the quantum confinement effect on excitonic relaxation processes, e.g., polarization dephasing and spin relaxation. In narrow quantum wells (QWs), monolayer fluctuations at the interface lead to localization of excitons at interface islands. These localized states can be viewed as weakly confined QD states. Earlier studies have used photoluminescence (PL) and PL excitation with high spatial resolution to probe an individual QD.^1-3 However, the origin of the very small linewidth was not clarified comprehensively.

© 1998 Optical Society of America