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Optica Publishing Group
  • International Quantum Electronics Conference
  • OSA Technical Digest (Optica Publishing Group, 1998),
  • paper QWN5

Coherent THz-piasmons In Alfiafts/GaAs heterostructures

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Abstract

Coherent plasma oscillations in polar semiconductors like GaAs can be generated by ultrafast screening of a space charge field by exciting cold electrons and holes with femtosecond laser pulses.1–4 Because of their high mobility, the electrons can undergo coherent oscillations following the periodically reversing electric field in the space charge region. For low excitation densities, the plasma frequency is well below the optical phonon frequency, therefore, the coupling between plasmons and optical phonons is very weak. In this range of “pure” plasmons, the frequencies obey the well known relation ωP2 = n · e2/m* · ε · ε0. Increasing the carrier density leads to a stronger coupling of plasmons to optical phonons when the plasma frequency ωP approaches the phonon frequencies ωLO and ωTO.5 This coupling appears in the carrier density dependence of both the frequency and the damping time of the plasmon phonon-coupled modes.

© 1998 Optical Society of America

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