Abstract

Semiconductor lasers are nonlinear media in which the dynamic light-matter interaction occuring on timescales ranging from femtosecond to the nanosecond regime lead to characteristic spatial and spectral properties of the charge carrier plasma and the optical fields. Depending on geometry of the active layer, injection current or spatio-spectral properties of an injected light beam the distributions of the charge carrier plasma and of the intensity can either reach a chaotic regime or stabilize.

© 2000 IEEE