Mid-Infrared GaInSb/AlGaInSb Quantum Well Laser Diodes

G. R. Nash; G. R. Nash; S. J. B. Przeslak; S. J. Smith; G. de Valicourt; A. D. Andreev; P. J. Carrington; M. Yin; A. Krier; S. D. Coomber; L. Buckle; M. T. Emeny; T. Ashley

doi:10.1364/CLEO.2009.JTuD21

Conference on Lasers and Electro-Optics/International Quantum Electronics Conference
OSA Technical Digest (CD) (Optica Publishing Group, 2009),
paper JTuD21
•https://doi.org/10.1364/CLEO.2009.JTuD21

Mid-Infrared GaInSb/AlGaInSb Quantum Well Laser Diodes

G. R. Nash, S. J. B. Przeslak, S. J. Smith, G. de Valicourt, A. D. Andreev, P. J. Carrington, M. Yin, A. Krier, S. D. Coomber, L. Buckle, M. T. Emeny, and T. Ashley

International Quantum Electronics Conference 2009

Baltimore, Maryland United States
31 May–5 June 2009
ISBN: 978-1-55752-869-8

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Joint IQEC Poster Session I (JTuD)

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G. R. Nash, S. J. B. Przeslak, S. J. Smith, G. de Valicourt, A. D. Andreev, P. J. Carrington, M. Yin, A. Krier, S. D. Coomber, L. Buckle, M. T. Emeny, and T. Ashley, "Mid-Infrared GaInSb/AlGaInSb Quantum Well Laser Diodes," in Conference on Lasers and Electro-Optics/International Quantum Electronics Conference, OSA Technical Digest (CD) (Optica Publishing Group, 2009), paper JTuD21.

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Abstract

Electroluminescence from GaInSb/AlGaInSb quantum well (QW) diode lasers, grown on GaAs, has been investigated as a function of strain in the QWs, with lasing occurring at ~3.3μm at 200K with 1.1% strain in the QW.

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