Abstract
We report the two-photon luminescence emission (2PE) study of single indium phosphide (InP) semiconductor nanowire trapped in a gradient force optical tweezers. Nanowires studied were zinc blende, wurtzite or mixed phase crystal poly-types and ranged in length from 1 to 10 μm. Our results show that the band-edge emission from two-photon absorption of nanowires trapped in solution is strong and enhanced, compared with 2PE in InP bulk material. Besides, a distinct blue shift was observed between single-photon luminescence emission (1PE) spectra and 2PE spectra.
© 2011 AOS
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