Abstract

Embedding a single quantum emitter in an artificial nanostructure allows engineering the optical properties of the emitter. Plasmon resonant structures are particularly interesting for this purpose, as they allow confining electromagnetic fields to the nanoscale. This results in highly modified light-matter interaction. The extreme field localization requires the plasmonic structure to be positioned and oriented with respect to the quantum system with nanometer scale accuracy. Experiments and devices with single quantum emitters coupled to plasmonic structures would greatly benefit from a scalable and flexible method to achieve this effect. Here we describe a technique which allows us to fabricate nanostructures positioned with respect to single GaAs quantum dots with an accuracy of better than 10 nm.

© 2013 IEEE