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Radiation Damages in CMOS Active Pixel Sensors

Vincent Goiffon, Pierre Magnan, Cédric Virmontois, Paola Cervantes, Franck Corbière, and Magali Estribeau

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Abstract

This paper presents a summary of the main results we observed on irradiated custom imagers manufactured using 0.18 μm CMOS processes dedicated to imaging. Several types of energetic particles have been used (gamma rays, X-rays, protons and neutrons) to irradiate the studied devices. Both total ionizing dose (TID) and displacement damage effects are reported. The most sensitive parameter is still the dark current.

© 2011 Optical Society of America

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