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2D multilayer InSe – An applicable 1000 nm light emitter and absorber

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Abstract

Multilayer InSe with a thickness above 20 nm is a direct semiconductor for flexible-optoelectronics use. We show a superior 1000-nm light emission and absorption capability of 2D multilayer InSe studied by photoluminescence and photoconductivity herein.

© 2016 Optical Society of America

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