Abstract

The development of blue and green semiconductor injection lasers for applications in high density optical recording is attracting considerable attention. Other uses for these devices in areas of displays, printing, sensing and medical instrumentation are also being envisioned. Two direct band gap semiconductor material systems are well suited for light generation in the blue and green spectral region. They are the so-called wide band gap II-VI and IB-V semiconductors represented by ZnSe and GaN, respectively. The advancement of ZnSe and GaN lasers requires an intimate interplay between improving the materials qualities and developing specific laser processing technologies for these materials. Both types of lasers rely on advanced strained-layer growth by either molecular beam epitaxy or metal organic chemical vapor deposition.

© 1996 Optical Society of America