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Conferences > ISUPTW > 2016 > IW4C > IW4C.6

The critical carrier density for the ultrafast rise time based on GaAs PCSS

Shaoqiang Wang and Wei Shi

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Abstract

Before the ultrafast rise time, the photocurrent waveforms have shown accumulation effect based on GaAs PCSS in the nonlinear mode. The critical photo-excited carrier density is calculated, and has important effects on the ultrafast rise.

© 2016 Optical Society of America

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